GaN transistors for power switching and millimeter-wave applications

International Journal of High Speed Electronics and Systems

Volumn 19, Issue 1, 2009, Pages 145-152

  Ueda, Tetsuzo ^a   Uemoto, Yasuhiro ^a   Tanaka, Tsuyoshi ^a   Ueda, Daisuke ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

AlGaN GaN; Breakdown voltage; Gate Injection Transistor; Heterojunction FET; Microstrip line; MIS HFET; On state resistance

Indexed keywords

ALGAN/GAN; BREAKDOWN VOLTAGE; GATE INJECTION TRANSISTOR; HETEROJUNCTION FET; MIS-HFET; ON-STATE RESISTANCE;

COMMUNICATION SYSTEMS; CORUNDUM; DRAIN CURRENT; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; MESFET DEVICES; MICROSTRIP LINES; MICROWAVE CIRCUITS; MILLIMETER WAVES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SWITCHING CIRCUITS;

MILLIMETER WAVE DEVICES;

EID: 68349132086     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156409006199     Document Type: Conference Paper

References (10)

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