High breakdown (>1500 V) AlGaN/GaN HEMTs by substrate-transfer technology

IEEE Electron Device Letters

Volumn 31, Issue 9, 2010, Pages 951-953

  Lu, Bin ^a   Palacios, Toms ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

AlGaN GaN; breakdown; high electron mobility transistor (HEMT); power electronics; substrate transfer; wafer bonding

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; ALN; BREAKDOWN; BREAKDOWN VOLTAGE; CARRIER WAFERS; HIGH BREAKDOWN; NEW TECHNOLOGIES; POLYCRYSTALLINE; SI SUBSTRATES; SPECIFIC-ON RESISTANCE; SUBSTRATE TRANSFER;

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; SILICON WAFERS; SUBSTRATES; TECHNOLOGY; WAFER BONDING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77956105850     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2052587     Document Type: Article

References (18)

1. Y.-F. Wu, M. J. Mitos, M. L. Moore, and S. Heikman, "A 97.8% efficient GaN HEMT boost converter with 300-W output power at 1 MHz," IEEE Electron Device Lett., vol.29, no.8, pp. 824-826, Aug. 2008.
2. K. Cheng, M. Leys, S. Degroote, J. Derluyn, B. Sijmus, P. Favia, O. Richard, H. Bender, M. Germain, and G. Borghs, "AlGaN/GaN high electron mobility transistors grown on 150 mm Si(111) substrates with high uniformity," Jpn. J. Appl. Phys., vol.47, no.3, pp. 1553-1555, Mar. 2008.
3. D. Visalli, M. V. Hove, J. Derluyn, S. Degroote, M. Leys, K. Cheng, M. Germain, and G. Borghs, "AlGaN/GaN/AlGaN double heterostruc-tures on silicon substrates for high breakdown voltage field-effect transistors with low on-resistance," Jpn. J. Appl. Phys., vol.48, no.4, p. 04C 101, Apr. 2009.
4. B. Lu, E. L. Piner, and T. Palacios, "Schottky-drain technology for AlGaN/GaN high-electron mobility transistors," IEEE Electron Device Lett., vol.31, no.4, pp. 302-304, Apr. 2010.
5. S. L. Selvaraj, T. Suzue, and T. Egawa, "Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers," IEEE Electron Device Lett., vol.30, no.6, pp. 587-589, Jun. 2009.
6. N. Ikeda, S. Kaya, J. Li, Y. Sato, S. Kato, and S. Yoshida, "High power AlGaN/GaN HFET with a high breakdown voltage of over 1.8 kV on 4 inch Si substrates and the suppression of current collapse," in Proc. 20th Int. Symp. Power Semicond. Devices IC's, May 2008, pp. 287-290.
7. S. Arulkumaran, T. Egawa, S. Matsui, and H. Ishikawa, "Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN/GaN high-electron-mobility transistors on 4 in. diameter silicon," Appl. Phys. Lett., vol.86, no.12, pp. 1235031-1235033, Mar. 2005.
8. Y. C. Choi, M. Pophristic, H.-Y. Cha, B. Peres, M. G. Spencer, and L. F. Eastman, "The effect of an Fe-doped GaN buffer on OFF-state breakdown characteristics in AlGaN/GaN HEMTs on Si substrate," IEEE Trans. Electron Devices, vol.53, no.12, pp. 2926-2931, Dec. 2006.
9. Y. Niiyama, S. Kato, Y. Sato, M. Iwami, J. Li, H. Takehara, H. Kambayashi, N. Ikeda, and S. Yoshida, "Fabrication of AlGaN/GaN HFET with a high breakdown voltage on 4-inch Si (111) substrate by MOVPE," in Mater. Res. Soc. Symp. Proc., 2007, vol.955E, pp. 369-374.
10. J. W. Johnson, E. L. Piner, A. Vescan, R. Therrien, P. Rajagopal, J. C. Roberts, J. D. Brown, S. Singhal, and K. L. Linthicum, "12 W/mm AlGaN-GaN HFETs on silicon substrates," IEEE Electron Device Lett., vol.25, no.7, pp. 459-461, Jul. 2004.
11. D. Lauvernier, J. P. Vilcot, S. Garidel, S. McMurtry, and D. Decoster, "Benzocyclobutene wafer bonding for III-V nanophotonic guiding structures," Electron. Lett., vol.41, no.21, pp. 1170-1172, Oct. 2005.
12. K. Ryu and T. Palacios, unpublished.
13. J. W. Chung, E. L. Piner, and T. Palacios, "N-face GaN/AlGaN HEMTs fabricated through layer transfer technology," IEEE Electron Device Lett., vol.30, no.2, pp. 113-116, Feb. 2009.
14. J. W. Chung, J. Lee, E. L. Piner, and T. Palacios, "Seamless on-wafer integration of GaN HEMTs and Si(100) MOSFETs," IEEE Electron Device Lett., vol.30, no.10, pp. 1015-1017, Oct. 2009.
15. M. A. Lampert, "Simplified theory of space-charge-limited currents in an insulator with traps," Phys. Rev., vol.103, no.6, pp. 1648-1656, Sep. 1956.
16. B. J. Baliga, "Power semiconductor device figure of merit for high-frequency applications," IEEE Electron Device Lett., vol.10, no.10, Oct. 1989.
17. Y. Dora, A. Chakraborty, L. McCarthy, S. Keller, S. P. Denbaars, and U. K. Mishra, "High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates," IEEE Electron Device Lett., vol.27, no.9, pp. 713-715, Sep. 2006.
18. Y. Kawakami, X. Q. Shen, G. Piao, M. Shimizu, H. Nakanishi, and H. Okumura, "Improvements of surface morphology and sheet resistance of AIGaN/GaN HEMT structures using quasi AIGaN barrier layers," J. Crystal Growth, vol.300, no.1, pp. 168-171, Mar. 2007.