High power AlGaN/GaN HFETs on 4 inch Si substrates

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Ikeda, Nariaki ^a   Kaya, Syuusuke ^a   Li, Jiang ^a   Sato, Yoshihiro ^a   Kokawa, Takuya ^a   Kato, Sadahiro ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFETS; BREAKDOWN VOLTAGE; CRYSTALLINE QUALITY; CURRENT COLLAPSE; GAN EPITAXIAL LAYERS; GAN LAYERS; HIGH BREAKDOWN VOLTAGE; HIGH-POWER; MAXIMUM DRAIN CURRENT; ON-RESISTANCE; SI SUBSTRATES;

DRAIN CURRENT; ELECTRIC BREAKDOWN; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 79251618532     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880759     Document Type: Article

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