Silicon substrate removal of GaN DHFETs for enhanced (>1100 V) breakdown voltage

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 851-853

  Srivastava, Puneet ^a,b   Das, Jo ^a   Visalli, Domenica ^a,b   Derluyn, Joff ^a   Van Hove, Marleen ^a   Malinowski, Pawel E ^a,b   Marcon, Denis ^a,b   Geens, Karen ^a   Cheng, Kai ^a   Degroote, Stefan ^a   Leys, Maarten ^a   Germain, Marianne ^a   Decoutere, Stefaan ^a   Mertens, Robert P ^a,b   Borghs, Gustaaf ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

AlGaN GaN AlGaN; breakdown voltage; double heterostructure FETs (DHFETs); Hall measurement; metalorganic chemical vapor deposition (MOCVD); silicon substrate removal

Indexed keywords

BREAKDOWN VOLTAGE; DOUBLE HETEROSTRUCTURES; HALL MEASUREMENTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; SILICON SUBSTRATES;

ELECTRIC BREAKDOWN; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; MESFET DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON; VAPOR DEPOSITION;

SUBSTRATES;

EID: 77955175521     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050673     Document Type: Article

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