Improved power device figure-of-merit (4.0 × 108 V 2 Ω-1 cm-2) in AlGaN/GaN high-electron-mobility transistors on high-resistivity 4-in. Si

Applied Physics Express

Volumn 4, Issue 8, 2011, Pages

  Arulkumaran, Subramaniam ^a   Vicknesh, Sahmuganathan ^a   Ing, Ng Geok ^b   Selvaraj, Susai Lawrence ^c   Egawa, Takashi ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; GAN HEMTS; POWER DEVICES; SPECIFIC-ON-RESISTANCE;

ELECTRIC BREAKDOWN; ELECTRIC EQUIPMENT; GALLIUM NITRIDE; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80051581814     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.084101     Document Type: Article

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