High critical electric field exceeding 8 MV/cm measured using an AlGaN p-i-n vertical conducting diode on n-SiC substrate

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 4 B, 2007, Pages 2316-2319

  Nishikawa, Atsushi ^a   Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

AIGaN; Breakdown voltage; Critical electric field; N SiC; On state resistance; Vertical conducting structure

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; SILICON CARBIDE; SUBSTRATES; VAPOR PHASE EPITAXY;

CONDUCTING DIODES; CRITICAL ELECTRIC FIELDS; ON-STATE RESISTANCE; VERTICAL CONDUCTING STRUCTURES;

TUNNEL DIODES;

EID: 34547880100     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.2316     Document Type: Article

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