Reduction of cracks in GaN films grown on Si-on-insulator by lateral confined epitaxy

Journal of Crystal Growth

Volumn 243, Issue 3-4, 2002, Pages 375-380

  Zamir, S ^a   Meyler, B ^a   Salzman, J ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides

Indexed keywords

BENDING (DEFORMATION); CRACKS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES;

LATERAL CONFINED EPITAXY (LCE);

GALLIUM NITRIDE;

EID: 0036724639     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01578-6     Document Type: Article

References (19)