Determination of bulk lifetime and surface recombination velocity of silicon ingots from dynamic photoluminescence

IEEE Journal of Photovoltaics

Volumn 3, Issue 4, 2013, Pages 1311-1318

  Giesecke, Johannes A ^a   Sinton, Ronald A ^b   Schubert, Martin C ^a   Riepe, Stephan ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b Sinton Consulting Inc   (United States)

Author keywords

Minority carrier lifetime; photoluminescence (PL); silicon ingot; surface recombination velocity

Indexed keywords

MINORITY CARRIER DIFFUSION; MINORITY CARRIER LIFETIMES; MINORITY-CARRIER MOBILITY; PHOTOLUMINESCENCE INTENSITIES; SELF-CONSISTENT APPROACH; SILICON INGOT; SIMULTANEOUS DETERMINATIONS; SURFACE RECOMBINATION VELOCITIES;

DIFFUSION; PHOTOLUMINESCENCE; SILICON;

INGOTS;

EID: 84884595709     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2013.2264622     Document Type: Article

References (40)

1. R. A. Sinton, A. Cuevas, and M. Stuckings, "Quasi-steady-state photoconductance, a new method for solar cell material and device characterization," in Proc. 25th IEEE Photovoltaic Spec. Conf., Washington, DC, USA, 1996, pp. 457-460.
2. R. A. Sinton and A. Cuevas, "Contactless determination of current-voltage characteristics and minority carrier lifetimes in semiconductors from quasi-steady-state photoconductance data," Appl. Phys. Lett., vol. 69, pp. 25102512, 1996.
3. R. A. Sinton, "Evaluating silicon blocks and ingotswith quasi-steady-state lifetime measurements," in Proc. 19th Eur. Photovoltaic Solar Energy Conf., Paris, France, 2004, pp. 520523.
4. S. Bowden and R. A. Sinton, "Determining lifetime in silicon blocks and wafers with accurate expressions for carrier density," J. Appl. Phys., vol. 102, pp. 1245011-124501-7, 2007.
5. J. S. Swirhun, R. A. Sinton, M. K. Forsyth, and T. Mankad, "Contactless measurement of minority carrier lifetime in silicon ingots and bricks," Prog. Photovoltaics: Res. Appl., vol. 19, pp. 313-319, 2011.
6. D. Klein, F.Wuensch, and M. Kunst, "The determination of charge-carrier lifetime in silicon," Phys. Status Solidi B, vol. 245, pp. 1865-1876, 2008.
7. N. Schuler, D. Mittelstrass, K. Dornich, J. R. Niklas, and H. Neuhaus, "Next generation inline minority carrier lifetime metrology on multicrystalline silicon bricks for PV," in Proc. 35th IEEE Photovoltaic Spec. Conf., Honolulu, HI, USA, 2010, pp. 852-857.
8. B. Mitchell, T. Trupke, J. W.Weber, and J. Nyhus, "Bulk minority carrier lifetimes and doping of silicon bricks from photoluminescence intensity ratios," J. Appl. Phys., vol. 109, pp. 0831111-083111-12, 2011.
9. B.Mitchell, J. W.Weber, D.Walter,D.Macdonald, and T. Trupke, "On the method of photoluminescence spectral intensity ratio imaging of silicon bricks: Advances and limitations," J. Appl. Phys., vol. 112, pp. 063116- 1-063116-13, 2012.
10. S. Herlufsen, K. Bothe, J. Schmidt, R. Brendel, and S. Siegmund, "Dynamic photoluminescence lifetime imaging of multicrystalline silicon bricks," Solar Energy Mater. Solar Cells, vol. 106, pp. 42-46, 2012.
11. A. B. Sproul, M. A. Green, and A. W. Stephens, "Accurate determination of minority carrier- and lattice scattering-mobility in silicon from photoconductance decay," J. Appl. Phys., vol. 72, pp. 4161-4171, 1992.
12. D. B. M. Klaassen, "A unified mobility model for device simulation - I. Model equations and concentration dependence," Solid State Electron., vol. 35, pp. 953-959, 1992. (Pubitemid 23567459)
13. D. B. M. Klaassen, "A unified mobility model for device simulation - II. Temperature dependence of carrier mobility and lifetime," Solid State Electron., vol. 35, pp. 961-967, 1992. (Pubitemid 23567458)
14. F. Schindler,M. C. Schubert,A.Kimmerle, J. Broisch, S. Rein,W.Kwapil, and W. Warta, "Modeling majority carrier mobility in compensated crystalline silicon for solar cells," Solar Energy Mater. Solar Cells, vol. 106, pp. 31-36, 2012.
15. P. Wurfel, T. Trupke, T. Puzzer, E. Schaffer, W. Warta, and S. W. Glunz, "Diffusion lengths of silicon solar cells from luminescence images," J. Appl. Phys., vol. 101, pp. 1231101-12311010, 2007.
16. F. E. Rougieux, D. Macdonald, A. Cuevas, S. Ruffell, J. Schmidt, B. Lim, and A. P. Knights, "Electron and hole mobility reduction and Hall factor in phosphorus-compensated p-type silicon," J. Appl. Phys., vol. 108, pp. 0137061-013706-5, 2010.
17. E. Fourmond, M. Forster, R. Einhaus, H. Lauvray, J. Kraiem, and M. Lemiti, "Electrical properties of boron, phosphorus and gallium codoped silicon," Energy Procedia, vol. 8, pp. 349-354, 2011.
18. B. Lim, M. Wolf, and J. Schmidt, "Carrier mobilities in multicrystalline silicon wafersmade from UMG-Si," Phys. Status Solidi C, vol. 8, pp. 835- 838, 2011.
19. M. Forster, F. E. Rougieux, A. Cuevas, B. Dehestru, A. Thomas, E. Fourmond, and M. Lemiti, "Incomplete ionization and carrier mobility in compensated p -type and n-type silicon," IEEE J. Photovoltaics, vol. 3, no. 1, pp. 108-113, Jan. 2013.
20. D. Baek, S. Rouvimov, B. Kim, T. C. Jo, and D. K. Schroder, "Surface recombination velocity of silicon wafers by photoluminescence," Appl. Phys. Lett., vol. 86, pp. 1121101-1121103, 2005.
21. R. A. Sinton and T. Trupke, "Limitations on dynamic excess carrier lifetime calibration methods," Prog. Photovoltaics: Res. Appl., vol. 20, pp. 246-249, 2012.
22. M. Turek, "Interplay of bulk and surface properties for steady-state measurements of minority carrier lifetimes," J. Appl. Phys., vol. 111, pp. 1237031-123703-9, 2012.
23. H. S. Carslaw and J. C. Jaeger, Conduction of Heat in Solids, 2nd ed. Oxford, U.K.: Clarendon, 1986.
24. K.Wang, M. A. Green, and H. Kampwerth, "Transient photoconductance and photoluminescence from thick silicon wafers and bricks: Analytical solutions," Solar Energy Mater. Solar Cells, vol. 111, pp. 189-192, 2013.
25. A. D. Polyanin, Handbook of Linear Partial Differential Equations for Engineers and Scientists. Boca Raton, FL, USA: CRC, 2002, p. 52.
26. P. Wurfel, S. Finkbeiner, and E. Daub, "Generalized Planck's radiation law for luminescence via indirect transitions," Appl. Phys. A, vol. 60, pp. 67-70, 1995.
27. M. A. Green and M. J. Keevers, "Optical properties of intrinsic silicon at 300 K," Prog. Photovoltaics: Res. Appl., vol. 3, pp. 189-192, 1995.
28. T. Trupke, "Influence of photon reabsorption on quasi-steady-state photoluminescence measurements on crystalline silicon," J. Appl. Phys., vol. 100, pp. 0635311-063531-8, 2006.
29. J. A. Giesecke, M. Kasemann, M. C. Schubert, P. Wurfel, and W. Warta, "Separation of local bulk and surface recombination in crystalline silicon from luminescence reabsorption," Prog. Photovoltaics: Res. Appl., vol. 18, pp. 1019, 2010.
30. M. A. Green, "Analytical expressions for spectral composition of band photoluminescence from silicon wafers and bricks," Appl. Phys. Lett., vol. 99, pp. 1311121-131112-3, 2011.
31. T. Trupke, R. A. Bardos, and M. D. Abbott, "Self-consistent calibration of photoluminescence and photoconductance lifetime measurements," Appl. Phys. Lett., vol. 87, pp. 1841021-184102-3, 2005.
32. J. A. Giesecke, M. C. Schubert,D.Walter, andW.Warta, "Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence, " Appl. Phys. Lett., vol. 97, pp. 0921091-092109-3, 2010.
33. J. A. Giesecke, S. W. Glunz, andW.Warta, "Understanding and resolving the discrepancy between differential and actual minority carrier lifetime," J. Appl. Phys., vol. 113, pp. 0737061-073706-8, 2013.
34. J. A. Giesecke, F. Schindler, M. Buhler, M. C. Schubert, and W. Warta, "Accurate determination ofminority carrier mobility in silicon from quasisteady- state photoluminescence," J. Appl. Phys., vol. 113, pp. 2137051- 213705-11, 2013.
35. J. A. Giesecke, M. C. Schubert, B. Michl, F. Schindler, and W. Warta, "Minority carrier lifetime imaging of silicon wafers calibrated by quasisteady- state photoluminescence," Solar Energy Mater. Solar Cells, vol. 95, pp. 1011-1018, 2011.
36. J. A. Giesecke andW.Warta, "Microsecond carrier lifetimemeasurements in silicon via quasi-steady-state photoluminescence," Prog. Photovoltaics: Res. Appl., vol. 20, pp. 238-245, 2012.
37. L. B. Valdes, "Resistivity measurements on germanium for transistors," Proc. IRE, vol. 42, pp. 420427, 1954.
38. W. R. Thurber, R. L. Mattis, Y. M. Liu, and J. J. Filliben, "Resistivitydopant density relationship for boron-doped silicon," J. Electrochem. Soc., vol. 127, pp. 2291-2294, 1980. (Pubitemid 11477384)
39. M. P. Peloso, J. S. Lew, T. Trupke, M. Peters, and R. Utama, "Evaluating the electrical properties of silicon wafer solar cells using hyperspectral imaging of luminescence," Appl. Phys. Lett., vol. 99, pp. 2219151- 221915-3, 2011.
40. E. Daub, "Photolumineszenz von silizium," Ph.D. dissertation, Dept. Phys., Univ. Karlsruhe, Karlsruhe, Germany, 1995.