Surface recombination velocity of silicon wafers by photoluminescence

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Baek, D ^a   Rouvimov, S ^b   Kim, B ^b   Jo, T C ^c   Schroder, D K ^a  

^a Arizona State University   (United States)

^b SUMCO USA   (United States)

^c NEW MEXICO INSTITUTE OF MINING AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR JUNCTION TRANSISTORS; DOPING DENSITY; OPTICAL REFLECTION; TRAP DENSITY MEASUREMENTS;

ABSORPTION; DIFFUSION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; MATHEMATICAL MODELS; PASSIVATION; PHOTOCONDUCTING DEVICES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; VELOCITY MEASUREMENT;

SILICON WAFERS;

EID: 17944371830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1884258     Document Type: Article

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