Microsecond carrier lifetime measurements in silicon via quasi-steady-state photoluminescence

Progress in Photovoltaics: Research and Applications

Volumn 20, Issue 2, 2012, Pages 238-245

  Giesecke, Johannes A ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

lifetime; photoluminescence; silicon

Indexed keywords

CARRIER LIFETIME MEASUREMENTS; DETECTED LIGHT; EFFECTIVE LIFETIME; INGAAS PHOTODIODES; LIFETIME; MEASUREMENT TECHNIQUES; MINORITY CARRIER LIFETIMES; PHOTOVOLTAICS; QUASI-STEADY STATE; SENSITIVITY LIMIT; SILICON PHOTODIODE; SYSTEMATIC ANALYSIS;

CARRIER LIFETIME; PHOTODIODES; PHOTOLUMINESCENCE; PHOTOVOLTAIC EFFECTS; SILICON;

SILICON WAFERS;

EID: 84857448835     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1128     Document Type: Article

References (21)

1. Trupke T, Bardos RA, Abbott MD,. Self-consistent calibration of photoluminescence and photoconductance lifetime measurements. Applied Physics Letters 2005; 87: 184102.
2. Giesecke JA, Schubert MC, Walter D, Warta W,. Minority carrier lifetime in silicon wafers from quasi-steady-state photoluminescence. Applied Physics Letters 2010; 97: 092109.
3. Giesecke JA, Schubert MC, Michl B, Schindler F, Warta W,. Minority carrier lifetime imaging of silicon wafers calibrated by quasi-steady-state photoluminescence. Solar Energy Materials and Solar Cells 2011; 95: 1011-1018.
4. Macdonald D, Cuevas A,. Trapping of minority carriers in multicrystalline silicon. Applied Physics Letters 1999; 74: 1710-1712. (Pubitemid 129310614)
5. Schöfthaler M, Brendel R,. Sensitivity and transient response of microwave reflection measurements. Journal of Applied Physics 1995; 77: 3162-3173.
6. th IEEE PVSC, Washington DC, 1996; 457-460.
7. Herlufsen S, Schmidt J, Hinken D, Bothe K, Brendel R,. Photoconductance-calibrated photoluminescence lifetime imaging of crystalline silicon. Physica Status Solidi (RRL) 2008; 2: 245-247.
8. th EU PVSEC, Hamburg, 2009; 1106-1108.
9. Sanii F, Giles FP, Schwartz RJ, Gray JL,. Contactless non-destructive measurement of bulk and surface recombination using frequency modulated free-carrier absorption. Solid-State Electronics 1992; 35: 311-317.
10. Glunz SW, Warta W,. High-resolution lifetime mapping using modulated free-carrier absorption. Journal of Applied Physics 1995; 77: 3243-3247.
11. th IEEE PVSC, Anchorage, 2000; 99-103.
12. Isenberg J, Riepe S, Glunz SW, Warta W, Imaging method for laterally resolved measurement of minority carrier densities and lifetimes: measurement principle and first applications. Journal of Applied Physics 2003; 93: 4268-4275.
13. Schubert. MC, Isenberg J, Warta W,. Spatially resolved lifetime imaging of silicon wafers by measurement of infrared emission. Journal of Applied Physics 2003; 94: 4139-4143.
14. Trupke T, Bardos RA, Schubert MC, Warta W,. Photoluminescence imaging of silicon wafers. Applied Physics Letters 2006; 89: 044107.
15. Giesecke JA, Kasemann M, Warta W,. Determination of local minority carrier diffusion lengths in crystalline silicon from luminescence images. Journal of Applied Physics 2009; 106: 014907.
16. Green MA, Keevers MJ,. Optical properties of intrinsic silicon at 300 K. Progress in Photovoltaics: Research and Applications 1995; 3: 189-192.
17. Würfel P,. The chemical potential of radiation. Journal of Physics C: Solid State Physics 1982; 15: 3967-3985.
18. Würfel P, Finkbeiner S, Daub E,. Generalized Planck's radiation law for luminescence via indirect transitions. Applied Physics A: Materials Science & Processing 1995; 60: 67-70.
19. Würfel P, Trupke T, Puzzer T, Schäffer E, Warta W, Glunz SW,. Diffusion lengths of silicon solar cells from luminescence images. Journal of Applied Physics 2007; 101: 123110.
20. Trupke T,. Influence of photon reabsorption on quasi-steady-state photoluminescence measurements on crystalline silicon. Journal of Applied Physics 2006; 100: 063531.
21. Giesecke JA, Kasemann M, Schubert MC, Würfel P, Warta W,. Separation of local bulk and surface recombination in crystalline silicon from luminescence reabsorption. Progress in Photovoltaics: Research and Applications 2010; 18: 10-19.