Carrier mobilities in multicrystalline silicon wafers made from UMG-Si

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 835-838

  Lim, Bianca ^a   Wolf, Martin ^a   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

Carrier mobilities; Compensation; Silicon

Indexed keywords

CARRIER DIFFUSIONS; COMPENSATION; COMPENSATION LEVEL; ELECTROCHEMICAL CAPACITANCE VOLTAGE; ELECTRON CONCENTRATION; EXPERIMENTAL DATA; IONIZED IMPURITIES; MINORITY-CARRIER MOBILITY; MULTICRYSTALLINE SILICON (MC-SI); MULTICRYSTALLINE SILICON WAFERS; N TYPE SILICON; N-TYPE MATERIALS; P-TYPE; SCATTERING CENTERS; TRANSITION REGIONS;

BORON; BORON COMPOUNDS; HOLE CONCENTRATION; IONIZATION; PHOSPHORUS; POLYSILICON; REDUCTION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

CARRIER MOBILITY;

EID: 79952666469     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000144     Document Type: Article

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