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Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

Electron and hole mobility reduction and Hall factor in phosphorus-compensated p -type silicon

(7) Rougieux, F E a MacDonald, D a Cuevas, A a Ruffell, S a Schmidt, J b Lim, B b Knights, A P c

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH (Germany)

c MCMASTER UNIVERSITY (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; ELECTROCHEMICAL CAPACITANCE VOLTAGE; HALL FACTOR; MAJORITY CARRIERS; MEASUREMENT OF THE RESISTIVITY; P-TYPE SILICON;

CAPACITANCE; ELECTRON MOBILITY; HALL MOBILITY; HOLE MOBILITY; PHOSPHORUS; VOLTAGE MEASUREMENT;

GALVANOMAGNETIC EFFECTS;

EID: 77955223091 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3456076 Document Type: Article

Times cited : (52)

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