Electrical properties of boron, phosphorus and gallium co-doped silicon

Energy Procedia

Volumn 8, Issue , 2011, Pages 349-354

  Fourmond, Erwann ^a   Forster, Maxime ^a,b   Einhaus, Roland ^b   Lauvray, Hubert ^b   Kraiem, Jed ^b   Lemiti, Mustapha ^a  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b APOLLON SOLAR   (France)

Author keywords

Carriers mobility; Doping compensation; Silicon

Indexed keywords

CARRIER MOBILITY; DOPING (ADDITIVES); GALLIUM; INGOTS; METAL CASTINGS; PHOSPHORUS;

CO-DOPED; CORRECTION TERMS; INGOT GROWTH; MAJORITY CARRIERS; MINORITY-CARRIER MOBILITY; SOLAR GRADE SILICONS;

SILICON;

EID: 80052086173     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.148     Document Type: Conference Paper

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