Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

IEEE Journal of Photovoltaics

Volumn 3, Issue 1, 2013, Pages 108-113

  Forster, M ^a,b,c   Rougieux, F E ^c   Cuevas, A ^c   Dehestru, B ^b   Thomas, A ^b   Fourmond, E ^b   Lemiti, M ^b  

^a APOLLON SOLAR   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Boron; carrier mobility; compensated silicon; gallium; ionization of dopant; phosphorus; scattering

Indexed keywords

COMPENSATION LEVEL; HALL EFFECT MEASUREMENT; INCOMPLETE IONIZATION; MINORITY-CARRIER MOBILITY; N TYPE SILICON; P-TYPE; ROOM TEMPERATURE; SHOW THROUGH; TEMPERATURE DEPENDENCE;

BORON; DOPING (ADDITIVES); GALLIUM; PHOSPHORUS; SCATTERING; SILICON;

CARRIER MOBILITY;

EID: 84871786210     PISSN: 21563381     EISSN: None     Source Type: Journal    
DOI: 10.1109/JPHOTOV.2012.2210032     Document Type: Article

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