Impact of plasma treatment on electrical properties of TiO 2/RuO2 based DRAM capacitor

Journal of Physics D: Applied Physics

Volumn 46, Issue 38, 2013, Pages

  Hudec, Boris ^a   Hušeková, Kristína ^a   Rosová, Alica ^a   Šoltýs, Ján ^a   Rammula, Raul ^b   Kasikov, Aarne ^b   Uustare, Teet ^b   Mičušík, Matej ^c   Omastová, Mária ^c   Aarik, Jaan ^b   Fröhlich, Karol ^a  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b UNIVERSITY OF TARTU   (Estonia)

^c INSTITUTE OF CHEMISTRY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-EQUIVALENT THICKNESS; DEAD LAYERS; DRAM CAPACITOR; METAL INSULATOR METAL CAPACITOR (MIM); OXYGEN CONTENT; PLASMA TREATMENT; PLASMA-INDUCED; STRUCTURAL AND ELECTRICAL PROPERTIES;

ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; CAPACITORS; METAL INSULATOR BOUNDARIES; OXYGEN; PHOTOELECTRONS; PLASMA APPLICATIONS; PLASMAS; RUTHENIUM ALLOYS; TITANIUM DIOXIDE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRIC PROPERTIES;

EID: 84884572733     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/38/385304     Document Type: Article

References (23)

1. International Technology Roadmap for Semiconductors (ITRS) 2012 Update www.itrs.net
2. Han J H, Han S, Lee W, Lee S W, Kim S K, Gatineau J, Dussarrat C and Hwang C S 2011 Appl. Phys. Lett. 99 022901
3. Kim S K, Kim K M, Jeong D S, Jeon W, Yoon K Y and Hwang C S 2013 J. Mater. Res. 28 313
4. Lee W, Han J H, Jeon W, Yoo Y W, Lee S W, Kim S K, Ko C-H, Lansalot-Matras C and Hwang C S 2013 Chem. Mater. 25 953
5. Pawlak M A et al 2012 Appl. Phys. Lett. 101 042901
6. Aarik J, Hudec B, Hušeková K, Rammula R, Kasikov A, Arroval T, Uustare T and Fröhlich K 2012 Semicond. Sci. Technol. 27 074007
7. Fröhlich K 2013 Mater. Sci. Semicond. Process. 16 1186
8. Fröhlich K, Hudec B, Aarik J, Tarre A, Machajdík D, Kasikov A, Hušeková K and Š Gaži 2011 Microelectron. Eng. 88 1525
9. Yang J J, Chen J D, Wise R, Steinmann P, Yeo Y C and Zhu C 2009 IEEE Electron Device Lett. 30 1033
10. Cheng C H, Pan H C, Huang C C, Chou C P, Hsiao C N, Hu J, Hwang M, Arikado T, McAlister S P and Chin A 2008 IEEE Electron Device Lett. 29 1105
11. Hsu H H, Cheng C H and Tsui B Y 2009 VLSI-TSA Symp. (Hsinchu, Taiwan,) p 67
12. Shye D C, Hwang C C, Lai M J, Jaing C C, Chen J S, Huang S, Juang M H, Chiou B S and Cheng H C 2003 Japan. J. Appl. Phys. 42 549
13. Saito S and Kuramasu K 1992 Japan. J. Appl. Phys. 31 135
14. Fröhlich K, Ťapajna M, Rosová A, Dobročka E, Hušeková K, Aarik J and Aidla A 2008 Electrochem. Solid-State Lett. 11 G19
15. Hudec B, Hušeková K, Dobročka E, Aarik J, Rammula R, Kasikov A, Tarre A, Vincze A and Fröhlich K 2011 J. Vac. Sci. Technol. B 29 01AC09
16. Seo M, Rha S H, Kim S K, Han J H, Lee W, Han S and Hwang C S 2011 J. Appl. Phys. 110 024105
17. Aarik L, Arroval T, Rammula R, Mändar H, Sammelselg V and Aarik J 2013 Thin Solid Films 542 100-7
18. Foelske A, Barbieri O, Hahn M and Kötz R 2006 Electrochem. Solid-State Lett. 9 A268
19. Kim K S and Winograd N 1974 J. Catal. 35 66
20. Atanasoska Lj, O'Grady W E, Atanasoski R T and Pollak F H 1988 Surf. Sci. 202 142
21. Hrbek J, van Campen D G and Malik I J 1995 J. Vac. Sci. Technol. A 13 1409
22. Chan H Y H, Takoudis C G and Weavert M J 1997 J. Catal. 172 336
23. Yunogami T and Nojiri K 2000 J. Vac. Sci. Technol. B 18 1911