SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1525-1528

Post-deposition processing and oxygen content of TiO2-based capacitors

(8) Frohlich K a Hudec, B a Aarik, J b Tarre, A b MacHajdik D a Kasikov, A b Husekova K a Gazi S a

a INSTITUTE OF ELECTRICAL ENGINEERING (Slovakia)

b UNIVERSITY OF TARTU (Estonia)

Author keywords

Atomic layer deposition; DRAM; Post deposition processing; TiO2

Indexed keywords

BOTTOM ELECTRODES; ELECTRODE INTERFACE; EQUIVALENT OXIDE THICKNESS; IMPURITIES IN; OXYGEN ANNEALING; OXYGEN CONTENT; OXYGEN STOICHIOMETRY; POST-DEPOSITION; POST-DEPOSITION PROCESSING; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; TIO;

ATOMIC LAYER DEPOSITION; OXYGEN; PLASMA DEPOSITION; RUTHENIUM COMPOUNDS; SCHOTTKY BARRIER DIODES; STOICHIOMETRY; TITANIUM DIOXIDE;

ELECTROLYTIC CAPACITORS;

EID: 79958060135 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.129 Document Type: Conference Paper

Times cited : (11)

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