Atomic layer deposition of high-permittivity TiO 2dielectrics with low leakage current on RuO 2in TiCl 4-based processes

Semiconductor Science and Technology

Volumn 27, Issue 7, 2012, Pages

  Aarik, Jaan ^a   Hudec, Boris ^b   Hušeková, Kristina ^b   Rammula, Raul ^a   Kasikov, Aarne ^a   Arroval, Tõnis ^a   Uustare, Teet ^a   Fröhlich, Karol ^b  

^a UNIVERSITY OF TARTU   (Estonia)

^b INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

AL-DOPING; CAPACITOR STRUCTURES; LOW-LEAKAGE CURRENT; RELATIVE PERMITTIVITY; TIO; UNDOPED FILMS;

ATOMIC LAYER DEPOSITION; LEAKAGE CURRENTS; PERMITTIVITY; RUTHENIUM ALLOYS; RUTHENIUM COMPOUNDS; SEMICONDUCTOR DOPING; TITANIUM DIOXIDE;

ALUMINUM;

EID: 84862751298     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/7/074007     Document Type: Article

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