Improvement of the performance of TiHfO MIM capacitors by using a dual plasma treatment of the lower electrode

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1105-1107

  Cheng, C H ^a   Pan, H C ^b   Huang, C C ^a   Chou, C P ^a   Hsiao, C N ^b   Hu, J ^c   Hwang, M ^c   Arikado, T ^c   McAlister, S P ^d   Chin, Albert ^a,e  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INSTRUMENT TECHNOLOGY RESEARCH CENTER   (Taiwan)

^c TOKYO ELECTRON LTD   (Japan)

^d NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^e Nano Electronics Consortium of Taiwan   (Taiwan)

Author keywords

High ; Metal insulator metal (MIM); Plasma treatment; TiHfO

Indexed keywords

EID: 54749148758     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2000945     Document Type: Article

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