Direct physical evidence of mechanisms of leakage and equivalent oxide thickness reduction in metal-insulator-metal capacitors based on RuO x/TiO x/Sr xTi yO z/TiN stacks

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  Pawlak, M A ^a   Swerts, J ^a   Popovici, M ^a   Kaczer, B ^a   Kim, M S ^a   Wang, W C ^a,b   Tomida, K ^a   Govoreanu, B ^a   Delmotte, J ^a   Afanas'Ev, V V ^a,b   Schaekers, M ^a   Vandervorst, W ^a   Kittl, J A ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS; K-VALUE; LOW LEAKAGE; METAL INSULATOR METAL CAPACITOR (MIM); O INCORPORATION; OXYGEN INCORPORATION; PHYSICAL EVIDENCE; TIO;

CAPACITORS; COMPUTER SIMULATION; MIM DEVICES; RUTHENIUM COMPOUNDS; SECONDARY ION MASS SPECTROMETRY; TITANIUM NITRIDE;

RUTHENIUM ALLOYS;

EID: 84864434134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737871     Document Type: Article

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