Anisotropic etching of RuO2 and Ru with high aspect ratio for gigabit dynamic random access memory

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 4, 2000, Pages 1911-1914

  Yunogami, Takashi ^a   Nojiri, Kazuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 23044521991     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

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