Low-Power VDD/3 write scheme with inversion coding circuit for complementary memristor array

IEEE Transactions on Nanotechnology

Volumn 12, Issue 5, 2013, Pages 851-857

  Ham, Seok Jin ^a   Mo, Hyun Sun ^a   Min, Kyeong Sik ^a  

^a Kookmin University   (South Korea)

Author keywords

Complementary memristor cell; cross point memories; inversion coding circuit; memristor; sneak path leakage

Indexed keywords

APPLIED VOLTAGES; CODING CIRCUITS; COMPLEMENTARY RESISTIVE SWITCHES; CROSS-POINT MEMORY; MEMRISTOR; OPERATING FREQUENCY; RESISTANCE CHANGE; SNEAK-PATH LEAKAGES;

CELLS; CYTOLOGY; PASSIVE FILTERS;

MEMRISTORS;

EID: 84883817746     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2274529     Document Type: Article

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