Capacity based nondestructive readout for complementary resistive switches

Nanotechnology

Volumn 22, Issue 39, 2011, Pages

  Tappertzhofen, S ^a   Linn, E ^a   Nielen, L ^a   Rosezin, R ^b   Lentz, F ^b   Bruchhaus, R ^b   Valov, I ^a,b   Bottger U ^a   Waser, R ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLING PERFORMANCE; FAST READOUT; INTEGRATED PASSIVES; MEMORY ARRAY; NONDESTRUCTIVE READOUT; PATH PROBLEMS; RESISTIVE SWITCHING; SWITCHING KINETICS; SWITCHING PROPERTIES;

SWITCHING SYSTEMS;

SWITCHING;

EID: 80052526700     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/39/395203     Document Type: Article

References (29)

1. Valov I, Waser R, Jameson J R and Kozicki M N 2011 Electrochemical metallization memories-fundamentals, applications, prospects Nanotechnology 22 254003
2. Kügeler C, Rosezin R, Linn E, Bruchhaus R and Waser R 2011 Materials, technologies, and circuit concepts for nanocrossbar-based bipolar RRAM Appl. Phys. A 102 791-809
3. Waser R and Aono M 2007 Nanoionics-based resistive switching memories Nature Mater. 6 833-40 (Pubitemid 350064191)
4. Waser R, Dittmann R, Staikov G and Szot K 2009 Redox-based resistive switching memories - nanoionic mechanisms, prospects, and challenges Adv. Mater. 21 2632-3
5. Fujisaki Y 2010 Current status of nonvolatile semiconductor memory technology Japan. J. Appl. Phys. 49 100001
6. Kügeler C, Meier M, Rosezin R, Gilles S and Waser R 2009 High density 3D memory architecture based on the resistive switching effect Solid State Electron. 53 1287-92
7. Linn E, Rosezin R, Kügeler C and Waser R 2010 Complementary resistive switches for passive nanocrossbar memories Nature Mater. 9 403-6
8. Rosezin R, Linn E, Nielen L, Kügeler C, Bruchhaus R and Waser R 2011 Integrated complementary resistive switches for passive high-density nanocrossbar arrays IEEE Electron Device Lett. 32 191-3
9. Akinaga H and Shima H 2010 Resistive random access memory (reram) based on metal oxides Proc. IEEE 98 2237-51
10. x memristive devices Appl. Phys. Lett. 97 232102
11. ITRS 2010 The international Technology Roadmap for Semiconductors - ITRS 2010 Edition
12. Kozicki M N, Park M and Mitkova M 2005 Nanoscale memory elements based on solid-state electrolytes IEEE Trans. Nanotechnol. 4 331-8 (Pubitemid 40794460)
13. Kozicki M N, Gopalan C, Balakrishnan M, Park M and Mitkova M 2004 Nonvolatile memory based on solid electrolytes Non-Volatile Memory Technology Symp. pp10-7 (Pubitemid 40690672)
14. 2-based resistive memory devices Thin Solid Films 518 3293-8
15. 2 thin films studied by conductive atomic force microscopy Appl. Phys. Lett. 95 13109
16. 2 thin films Curr. Appl. Phys. 10 E71-4
17. 2/Pt stack Electrochem. Solid State Lett. 10 G51-3
18. x RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications IEDM Tech. Dig. 451-3
19. Kozicki M N, Gopalan C, Balakrishnan M and Mitkova M 2006 A low-power nonvolatile switching element based on copper-tungsten oxide solid electrolyte IEEE Trans. Nanotechnol. 5 535-44 (Pubitemid 44444396)
20. 2 IEEE Trans. Electron Device 54 2762-8 (Pubitemid 47541876)
21. 2 - a prototypical memristive material Nanotechnology 22 254001
22. 3:Nb single crystal Appl. Phys. Lett. 97 222117
23. 2/TiN film for nonvolatile memory application Appl. Phys. Lett. 91 223510
24. 2 and MSQ thin films for non-volatile memory applications (RRAM) Non-Volatile Memory Technology Symp. pp59-63
25. 2-films reactively sputtered from Ti in an RF magnetron Vacuum 47 1333-6 (Pubitemid 126362050)
26. 2 J. Phys. Chem. Solids 32 1935-45
27. Terabe K, Hasegawa T, Nakayama T and Aono M 2005 Quantized conductance atomic switch Nature 433 47-50 (Pubitemid 40101138)
28. Strukov D B and Williams R S 2009 Exponential ionic drift: fast switching and low volatility of thin-film memristors Appl. Phys. A 94 515-9
29. 2-based resistive switching cells: overcoming the voltage-time dilemma of electrochemical metallization memories Appl. Phys. Lett. 94 072109