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Journal of Photopolymer Science and Technology

Volumn 26, Issue 5, 2013, Pages 625-634

Secondary electrons in EUV lithography

(11) Torok, Justin a Del Re, Ryan a Herbol, Henry a Das, Sanjana a Bocharova, Irina a Paolucci, Angela a Ocola, Leonidas E b Ventrice Jr , Carl a Lifshin, Eric a Denbeaux, Greg a Brainard, Robert L a

a STATE UNIVERSITY OF NEW YORK (United States)

b ARGONNE NATIONAL LABORATORY (United States)

Author keywords

EUV lithography; High PAG loaded resist; Photoelectron; Secondary electron

Indexed keywords

EID: 84883692045 PISSN: 09149244 EISSN: 13496336 Source Type: Journal
DOI: 10.2494/photopolymer.26.625 Document Type: Article

Times cited : (76)

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- We used the confidential empirical formula supplied by the resist vendor and used a mass density of 1.4 based on previous work (Brainard and Higgins)

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