Interface lattice displacement measurement to 1 pm by geometric phase analysis on aberration-corrected HAADF STEM images

Acta Materialia

Volumn 61, Issue 15, 2013, Pages 5646-5663

  Zhu, Yuanyuan ^a   Ophus, Colin ^b   Ciston, Jim ^b   Wang, Haiyan ^a,c  

^a TEXAS A AND M UNIVERSITY   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c Department of Electrical and Computer Engineering   (United States)

Author keywords

Geometric phase analysis (GPA); Heterogeneous interface; Lattice strains; Scanning transmission electron microscopy (STEM); Thin films

Indexed keywords

ABERRATION-CORRECTED; GEOMETRIC PHASE ANALYSIS; HETEROGENEOUS INTERFACES; HIGH-ANGLE ANNULAR DARK FIELDS; LATTICE STRAIN; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SECONDARY RELAXATIONS; STRAIN QUANTIFICATIONS;

CRYSTAL LATTICES; GEOMETRY; STRAIN; STRONTIUM TITANATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

PHASE INTERFACES;

EID: 84881311383     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2013.06.006     Document Type: Article

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