Surface relaxation of strained semiconductor heterostructures revealed by finite-element calculations and transmission electron microscopy

Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties

Volumn 78, Issue 4, 1998, Pages 879-891

  Jacob, D ^a   Androussi, Y ^a   Benabbas, T ^a   Francois P ^a   Lefebvre, A ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032193167     PISSN: 01418610     EISSN: None     Source Type: Journal    
DOI: 10.1080/01418619808239962     Document Type: Article

References (23)

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