Comparison of convergent beam electron diffraction and geometric phase analysis for strain measurement in a strained silicon device

Journal of Microscopy

Volumn 241, Issue 2, 2011, Pages 195-199

  Diercks, D ^a   Lian, G ^b   Chung, J ^b   Kaufman, M ^c  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b TEXAS INSTRUMENTS   (United States)

^c Department of Metallurgical and Materials Engineering   (United States)

Author keywords

Convergent beam electron diffraction (CBED); Geometric phase analysis (GPA); High angle annular dark field scanning transmission electron microscopy (HAADF STEM); Local strain measurement

Indexed keywords

ELECTRON DIFFRACTION; ELECTRONS; GEOMETRY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOS DEVICES; MOSFET DEVICES; OXIDE SEMICONDUCTORS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; STRAINED SILICON;

ANNULAR DARK FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; CONVERGENT BEAM ELECTRON DIFFRACTION; CONVERGENT BEAMS; GEOMETRIC PHASE ANALYSE; GEOMETRIC PHASE ANALYSIS; HIGH-ANGLE ANNULAR DARK FIELDS; HIGH-ANGLE ANNULAR-DARK-FIELD SCANNING TRANSMISSION ELECTRON MICROSCOPY; LOCAL STRAIN MEASUREMENT; LOCAL STRAINS; STRAINS MEASUREMENTS;

STRAIN MEASUREMENT;

METAL OXIDE; SILICON;

ARTICLE; CONVERGENT BEAM ELECTRON DIFFRACTION; FIELD EFFECT TRANSISTOR; GEOMETRIC PHASE ANALYSIS; GEOMETRY; INTERMETHOD COMPARISON; MEASUREMENT; PRIORITY JOURNAL; RADIOLOGICAL PROCEDURES; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 78651259007     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2010.03423.x     Document Type: Article

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