Domain epitaxy: A unified paradigm for thin film growth

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 278-285

  Narayan, J ^a   Larson, B C ^b  

^a North Carolina State University   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL DEFECTS; EPITAXIAL GROWTH; IN SITU PROCESSING; MONOLAYERS; PATTERN MATCHING; SAPPHIRE; SILICON; SINGLE CRYSTALS; STRAIN; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

DOMAIN MATCHING EPITAXY (DME);

THIN FILMS;

EID: 0037246471     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1528301     Document Type: Article

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