Defect-related lattice strain and the transition temperature in ferroelectric thin films

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 9, 2004, Pages

  Balzar, D ^a,b   Ramakrishnan, P A ^c   Hermann, A M ^c  

^a UNIVERSITY OF DENVER   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c UNIVERSITY OF COLORADO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; DIELECTRIC CONSTANT; ELECTRIC ACTIVITY; ENERGY; FILM; GLASS TRANSITION TEMPERATURE; MATHEMATICAL COMPUTING; MATHEMATICAL MODEL; MATHEMATICS; POLARIZATION; THERMODYNAMICS;

EID: 19744381013     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.092103     Document Type: Article

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