메뉴 건너뛰기




Volumn 94, Issue 23, 2009, Pages

Carrier compensation by deep levels in Zn1-x Mgx O /sapphire

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAP ENERGY; BAND GAPS; CARRIER COMPENSATION; DEEP LEVEL; DEEP LEVEL SPECTRUM; ELECTRON CONCENTRATION; ELECTRON TRAPPING; MG CONTENT; SCHOTTKY DIODES; SERIES RESISTANCES; SYSTEMATIC ANALYSIS; THREE ORDERS OF MAGNITUDE; TRAP CONCENTRATION;

EID: 67649105606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3149699     Document Type: Article
Times cited : (33)

References (13)
  • 8
    • 0000845971 scopus 로고
    • 0163-1829,. 10.1103/PhysRevB.23.5335
    • A. Chantre, G. Vincent, and D. Bios, Phys. Rev. B 0163-1829 23, 5335 (1981). 10.1103/PhysRevB.23.5335
    • (1981) Phys. Rev. B , vol.23 , pp. 5335
    • Chantre, A.1    Vincent, G.2    Bios, D.3
  • 11
    • 0000543163 scopus 로고
    • 0038-1098,. 10.1016/0038-1098(65)90039-6
    • G. Lucovsky, Solid State Commun. 0038-1098 3, 299 (1965). 10.1016/0038-1098(65)90039-6
    • (1965) Solid State Commun. , vol.3 , pp. 299
    • Lucovsky, G.1
  • 12
    • 34047191629 scopus 로고    scopus 로고
    • 0163-1829,. 10.1103/PhysRevB.74.081201
    • J. Li, S. -H. Wei, S. -S. Li, and J. -B. Xia, Phys. Rev. B 0163-1829 74, 081201 (2006). 10.1103/PhysRevB.74.081201
    • (2006) Phys. Rev. B , vol.74 , pp. 081201
    • Li, J.1    Wei, S.-H.2    Li, S.-S.3    Xia, J.-B.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.