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Journal of Applied Physics

Volumn 110, Issue 1, 2011, Pages

Nitrogen and copper doping in MgxZn1-xO films and their impact on p-type conductivity

(3) Mohanta, S K a Nakamura, A a Temmyo, J a

a SHIZUOKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER GAS; CO-DOPED; CONDUCTION TYPE; COPPER DOPING; DONOR STATE; ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; MG CONTENT; N-DOPED; N-TYPE CONDUCTION; N-TYPE CONDUCTIVITY; P-TYPE; P-TYPE CONDUCTION; P-TYPE CONDUCTIVITY; SHALLOW DONORS; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES;

ACTIVATION ENERGY; ELECTRON MOBILITY; HALL EFFECT; METADATA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN PLASMA; PLASMA DEPOSITION; SEMICONDUCTOR DOPING; ZINC;

COPPER;

EID: 79960515864 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3603038 Document Type: Article

Times cited : (20)

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