Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness

Applied Physics Letters

Volumn 86, Issue 4, 2005, Pages

  Zubiaga, A ^a,b   Tuomisto, F ^a   Plazaola, F ^a,b   Saarinen, K ^a   Garcia, J A ^b   Rommeluere, J F ^c   Zuniga Perez J ^d   Munoz Sanjose V ^d  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^c CNRS   (France)

^d UNIVERSITY OF VALENCIA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POSITRON ANNIHILATION SPECTROSCOPY; SAPPHIRE; SUBSTRATES; THICKNESS MEASUREMENT; ZINC;

HETEROEPITAXY; LAYER THICKNESS; VACANCY-TYPE DEFECTS;

ZINC OXIDE;

EID: 13644273771     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1855412     Document Type: Article

References (16)

1. D. F. Croxall, R. C. C. Ward, C. A. Wallace, and R. C. Kell, J. Cryst. Growth 22, 117 (1974).
2. D. H. Hofmann, A. Hofstaetter, F. Leiter, H. Zhou, F. Henecker, B. K. Meyer, S. B. Orlinskii, J. Schmidt, and P. G. Baranov, Phys. Rev. Lett. 88, 045504-1 (2002).
3. K. I. Hagemark, J. Solid State Chem. 16, 293 (1976).
4. G. D. Mahan, J. Appl. Phys. 54, 3825 (1983).
5. A. F. Kohan, G. Ceder, D. Morgan, and Chris. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
6. T. Koida, S. F. Chichibu, A. Uedono, A. Tsukazaki, M. Kawasaki, T. Sota, Y. Segawa, and H. Koinuma, Appl. Phys. Lett. 82, 532 (2003).
7. A. Uedono, T. Koida, A. Tsukazaki, M. Kawasaki, Z. Q. Chen, S. F. Chichibu, and H. Koinuma, J. Appl. Phys. 93, 2481 (2003).
8. F. Tuomisto, V. Ranki, K. Saarinen, and D. C. Look, Phys. Rev. Lett. 91, 205502 (2003).
9. Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, J. Appl. Phys. 94, 4807 (2003).
10. Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, Phys. Rev. B 69, 035210 (2004).
11. C. Munuera, J. Zúñiga-Pérez, J. F. Rommeluer, V. Sallet, R. Triboulet, F. Soria, V. Muñoz-San José, and C. Ocal, J. Cryst. Growth 264, 70 (2004).
12. K. Saarinen, P. Hautojärvi, and C. Corbel, in Identification of Defects in Semiconductors, edited by M. Stavola (Academic, New York, 1998).
13. M. J. Puska, C. Corbel, and R. M. Nieminen, Phys. Rev. B 41, 9980 (1990).
14. K. Saarinen, T. Suski, I. Grzegory, and D. C. Look, Phys. Rev. B 64, 233201 (2001).
15. J. Oila, J. Kivioja, V. Ranki, K. Saarinen, D. C. Look, R. J. Molnar, S. S. Park, S. K. Lee, and J. Y. Han, Appl. Phys. Lett. 82, 3433 (2003).
16. J. Oila, A. Kemppinen, A. Laakso, K. Saarinen, W. Egger, L. Liszkay, P. Sperr, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 84, 1486 (2004).