Schottky barrier contacts formed on polar and nonpolar MgxZn1-xO films grown by remote plasma enhanced MOCVD

Physica Status Solidi (B) Basic Research

Volumn 247, Issue 6, 2010, Pages 1472-1475

  Nakamura, A ^a   Hayashi, T ^a   Hierro, A ^b   Tabares, G ^b   Ulloa, J M ^b   Munoz E ^b   Temmyo, J ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Epitaxy; II VI semiconductors; Schottky barriers

Indexed keywords

EID: 77954160177     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200983227     Document Type: Article

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