메뉴 건너뛰기




Volumn 2, Issue 1, 2012, Pages 17-22

Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors

Author keywords

[No Author keywords available]

Indexed keywords


EID: 85011457798     PISSN: 21596859     EISSN: 21596867     Source Type: Journal    
DOI: 10.1557/mrc.2012.1     Document Type: Article
Times cited : (19)

References (24)
  • 1
    • 9744248669 scopus 로고    scopus 로고
    • Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
    • Nomura K., Ohta H., Takagi A., Kamiya T., Hirano M., and Hosono H.: Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 432, 488–492 (2004).
    • (2004) Nature , vol.432 , pp. 488-492
    • Nomura, K.1    Ohta, H.2    Takagi, A.3    Kamiya, T.4    Hirano, M.5    Hosono, H.6
  • 4
    • 78650292470 scopus 로고    scopus 로고
    • Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process
    • Banger K.K., Yamashita Y., Mori K., Peterson R.L., Leedham T., Rickard J., and Sirringhaus H.: Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process. Nat. Mater. 10, 45–50 (2011).
    • (2011) Nat. Mater. , vol.10 , pp. 45-50
    • Banger, K.K.1    Yamashita, Y.2    Mori, K.3    Peterson, R.L.4    Leedham, T.5    Rickard, J.6    Sirringhaus, H.7
  • 6
    • 13544269370 scopus 로고    scopus 로고
    • High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
    • Chiang H.Q., Wager J.F., Hoffman R.L., Jeong J., and Keszler D.A.: High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer. Appl. Phys. Lett. 86, 013503 (2005).
    • (2005) Appl. Phys. Lett. , vol.86
    • Chiang, H.Q.1    Wager, J.F.2    Hoffman, R.L.3    Jeong, J.4    Keszler, D.A.5
  • 7
    • 78951480081 scopus 로고    scopus 로고
    • A high performance inkjet printed zinc tin oxide transparent thin-film transistor manufactured at the maximum process temperature of 300 °C and its stability test
    • Avis C. and Jang J.: A high performance inkjet printed zinc tin oxide transparent thin-film transistor manufactured at the maximum process temperature of 300 °C and its stability test. Electrochem. Solid-State Lett. 14, J9–J11 (2011).
    • (2011) Electrochem. Solid-State Lett. , vol.14 , pp. J9-J11
    • Avis, C.1    Jang, J.2
  • 8
    • 77955734598 scopus 로고    scopus 로고
    • Postannealing process for low temperature processed sol–gel zinc tin oxide thin film transistors
    • Seo S.J., Hwang Y.H., and Bae B.S.: Postannealing process for low temperature processed sol–gel zinc tin oxide thin film transistors. Electrochem. Solid-State Lett. 13, H357–H359 (2010).
    • (2010) Electrochem. Solid-State Lett. , vol.13 , pp. H357-H359
    • Seo, S.J.1    Hwang, Y.H.2    Bae, B.S.3
  • 9
    • 0001517382 scopus 로고
    • Studies on metal hydroxy compounds. I. Thermal analyses of zinc derivatives ε-Zn(OH)2
    • Zn, 5, (OH), 8, Cl
    • O.K., Srivastava, E.A., Secco, Studies on metal hydroxy compounds. I. Thermal analyses of zinc derivatives ε-Zn(OH)2, Can. J. Chem., Zn, 5, (OH), 8, Cl, (1967), 45
    • (1967) Can. J. Chem. , vol.45
    • Srivastava, O.K.1    Secco, E.A.2
  • 12
    • 0031546782 scopus 로고    scopus 로고
    • Liquid phase deposition film of tin oxide
    • Tsukuma K., Akiyama T., and Imai H.: Liquid phase deposition film of tin oxide. J. Non-Cryst. Solids 210, 48–54 (1997).
    • (1997) J. Non-Cryst. Solids , vol.210 , pp. 48-54
    • Tsukuma, K.1    Akiyama, T.2    Imai, H.3
  • 13
    • 34250621864 scopus 로고    scopus 로고
    • A general route to printable high-mobility transparent amorphous oxide semiconductors
    • Lee D.H., Chang Y.J., Herman G.S., and Chang C.H.: A general route to printable high-mobility transparent amorphous oxide semiconductors. Adv. Mater. 19, 843–847 (2007).
    • (2007) Adv. Mater. , vol.19 , pp. 843-847
    • Lee, D.H.1    Chang, Y.J.2    Herman, G.S.3    Chang, C.H.4
  • 14
    • 2442560055 scopus 로고    scopus 로고
    • ZnO–SnO2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO 2 targets
    • Y., Hayashi, K., Kondo, K., Murai, T., Moriga, I., Nakabayashim, H., Fukumoto, K., Tominaga, ZnO–SnO2 transparent conductive films deposited by opposed target sputtering system of ZnO and SnO 2 targets, Vacuum, (2004), 74, 607-611
    • (2004) Vacuum , vol.74 , pp. 607-611
    • Hayashi, Y.1    Kondo, K.2    Murai, K.3    Moriga, T.4    Nakabayashim, I.5    Fukumoto, H.6    Tominaga, K.7
  • 15
    • 63649106046 scopus 로고    scopus 로고
    • High performance solution-processed amorphous zinc tin oxide thin film transistor
    • Seo S.J., Choi C.G., Hwang Y.H., and Bae B.S.: High performance solution-processed amorphous zinc tin oxide thin film transistor. J. Phys. D: Appl. Phys. 42, 035106 (2009).
    • (2009) J. Phys. D: Appl. Phys. , vol.42
    • Seo, S.J.1    Choi, C.G.2    Hwang, Y.H.3    Bae, B.S.4
  • 16
    • 69149104577 scopus 로고    scopus 로고
    • High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability
    • Park S.K., Kim Y.H., Kim H.S., and Han J.I.: High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability. Electrochem. Solid-State Lett. 12, H256–H258 (2009).
    • (2009) Electrochem. Solid-State Lett. , vol.12 , pp. H256-H258
    • Park, S.K.1    Kim, Y.H.2    Kim, H.S.3    Han, J.I.4
  • 18
    • 0001789035 scopus 로고    scopus 로고
    • Factor analysis and XPS-data preprocessing for non-conducting samples
    • Oswald S. and Baunack S.: Factor analysis and XPS-data preprocessing for non-conducting samples. Fresen. J. Anal. Chem. 365, 59–62 (1999).
    • (1999) Fresen. J. Anal. Chem. , vol.365 , pp. 59-62
    • Oswald, S.1    Baunack, S.2
  • 19
    • 52949097961 scopus 로고    scopus 로고
    • Origin of threshold voltage instability in indium–gallium–zinc oxide thin film transistors
    • Jeong J.K., Yang H.W., Jeong J.H., Mo Y.G., and Kim H.D.: Origin of threshold voltage instability in indium–gallium–zinc oxide thin film transistors. Appl. Phys. Lett. 93, 123508 (2008).
    • (2008) Appl. Phys. Lett. , vol.93
    • Jeong, J.K.1    Yang, H.W.2    Jeong, J.H.3    Mo, Y.G.4    Kim, H.D.5
  • 20
    • 67650474594 scopus 로고    scopus 로고
    • Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors
    • Nomura K., Kamiya T., Hirano M., and Hosono H.: Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors. Appl. Phys. Lett. 95, 013502 (2009).
    • (2009) Appl. Phys. Lett. , vol.95
    • Nomura, K.1    Kamiya, T.2    Hirano, M.3    Hosono, H.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.