Effect of annealing on the mobility and morphology of thermally activated pentacene thin film transistors

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Guo, Dong ^a   Ikeda, Susumu ^a   Saiki, Koichiro ^a   Miyazoe, Hiroyuki ^a   Terashima, Kazuo ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CARRIER MOBILITY; DATA RECORDING; DEPOSITION; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; MICROSTRUCTURE; MOLECULAR BEAMS; MORPHOLOGY; STRESSES; THERMAL EFFECTS; THERMAL EXPANSION; TRANSISTORS; TRANSPORT PROPERTIES; X RAY DIFFRACTION ANALYSIS;

ANNEALING EFFECTS; ORGANIC MOLECULAR BEAM DEPOSITION; THERMAL ANNEALING; THIN FILM TRANSISTORS (TFT);

THIN FILMS;

EID: 33646872064     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2193055     Document Type: Article

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