120°C fabrication technology for a-Si:H thin film transistors on flexible polyimide substrates

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 18, Issue 2, 2000, Pages 780-782

  Sazonov, A ^a   Nathan, A ^a  

^a UNIVERSITY OF WATERLOO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; CARRIER MOBILITY; ELECTRIC CURRENTS; ETCHING; GATES (TRANSISTOR); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYIMIDES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; SPUTTERING;

AMORPHOUS SILICON NITRIDE; GATE PATTERNING; HYDROGENATED AMORPHOUS SILICON;

THIN FILM TRANSISTORS;

EID: 0034350351     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582179     Document Type: Article

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