Conduction tuning of graphene based on defect-induced localization

ACS Nano

Volumn 7, Issue 7, 2013, Pages 5694-5700

  Nakaharai, Shu ^a   Iijima, Tomohiko ^a   Ogawa, Shinichi ^a   Suzuki, Shingo ^a   Li, Song Lin ^b   Tsukagoshi, Kazuhito ^b   Sato, Shintaro ^a   Yokoyama, Naoki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

carrier transport; defect; graphene; helium ion microscope; ion irradiation; strong localization; transport gap

Indexed keywords

CHEMICAL SURFACE MODIFICATION; CONDUCTION PROPERTIES; EXPONENTIAL DEPENDENCE; HELIUM ION MICROSCOPES; ORDERS OF MAGNITUDE; STRONG LOCALIZATIONS; THERMALLY ACTIVATED; TRANSPORT GAP;

ACTIVATION ENERGY; CARRIER TRANSPORT; DEFECTS; FIELD EFFECT TRANSISTORS; ION BOMBARDMENT; IONS; MODULATION;

GRAPHENE;

GRAPHITE; HEAVY ION; NANOMATERIAL;

CHEMISTRY; CONFORMATION; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; MATERIALS TESTING; MOLECULAR IMPRINTING; PARTICLE SIZE; PROCEDURES; RADIATION RESPONSE; SURFACE PROPERTY; ULTRASTRUCTURE; ARTICLE; METHODOLOGY; RADIATION EXPOSURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; GRAPHITE; HEAVY IONS; MATERIALS TESTING; MOLECULAR CONFORMATION; MOLECULAR IMPRINTING; NANOSTRUCTURES; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84880770037     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn401992q     Document Type: Article

References (68)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films Science 2004, 306, 666-669
2. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Katsnelson, M. I.; Grigorieva, I. V. S.; Dubonos, V.; Firsov, A. A. Two Dimensional Gas of Massless Dirac Fermions in Graphene Nature 2005, 438, 197-200
3. Zhang, Y.; Tan, Y.-W.; Stormer, H. L.; Kim, P. Experimental Observation of the Quantum Hall Effect and Berry's Phase in Graphene Nature 2005, 438, 201-204
4. Schwierz, F. Graphene Transistors Nat. Nanotechnol. 2010, 5, 487-496
5. Boukhvalov, D. W.; Katsnelson, M. I. Chemical Functionalization of Graphene with Defects Nano Lett. 2008, 8, 4373-4379
6. Boukhvalov, D. W.; Katsnelson, M. I. Chemical Functionalization of Graphene J. Phys.: Condens. Matter 2009, 21, 344205
7. Gilje, S.; Han, S.; Wang, M.; Wang, K. L.; Kaner, R. B. A Chemical Route to Graphene for Device Applications Nano Lett. 2007, 7, 3394-3398
8. Tung, V. C.; Allen, M. J.; Yang, Y.; Kaner, R. B. High-Throughput Solution Processing of Large-Scale Graphene Nat. Nanotechnol. 2008, 4, 25-29
9. Wu, X.; Sprinkle, M.; Li, X.; Ming, F.; Berger, C.; de Heer, W. A. Epitaxial-Graphene/Graphene-Oxide Junction: An Essential Step towards Epitaxial Graphene Electronics Phys. Rev. Lett. 2008, 101, 026801
10. Fujii, S.; Enoki, T. Cutting of Oxidized Graphene into Nanosized Pieces J. Am. Chem. Soc. 2010, 132, 10034-10041
11. Guo, L.; Shao, R.-Q.; Zhang, Y.-L.; Jiang, H.-B.; Li, X.-B.; Xie, S.-Y.; Xu, B.-B.; Chen, Q.-D.; Song, J.-F.; Sun, H.-B. Bandgap Tailoring and Synchronous Microdevices Patterning of Graphene Oxides J. Phys. Chem. C 2012, 116, 3594-3599
12. Masubuchi, S.; Arai, M.; Machida, T. Atomic Force Microscopy Based Tunable Local Anodic Oxidation of Graphene Nano Lett. 2011, 11, 4542-4546
13. Gómez-Navarro, C.; Weitz, R. T.; Bittner, A. M.; Scolari, M.; Mews, A.; Burghard, M.; Kern, K. Electronic Transport Properties of Individual Chemically Reduced Graphene Oxide Sheets Nano Lett. 2007, 7, 3499-3503
14. Yan, J.-A.; Xian, L.; Chou, M. Y. Structural and Electronic Properties of Oxidized Graphene Phys. Rev. Lett. 2009, 103, 086802
15. Leconte, N.; Lherbier, A.; Varchon, F.; Ordejon, P.; Roche, S.; Charlier, J.-C. Quantum Transport in Chemically Modified Two-Dimensional Graphene: From Minimal Conductivity to Anderson Localization Phys. Rev. B 2011, 84, 235420
16. Leconte, N.; Moser, J.; Ordejón, P.; Tao, H.; Lherbier, A.; Bachtold, A.; Alsina, F.; Sotomayor Torres, C. M.; Charlier, J.-C.; Roche, S. Damaging Graphene with Ozone Treatment: A Chemically Tunable Metal Insulator Transition ACS Nano 2010, 4, 4033-4038
17. Elias, D. C.; Nair, R. R.; Mohiuddin, T. M. G.; Morozov, S. V.; Blake, P.; Halsall, M. P.; Ferrari, A. C.; Boukhvalov, D. W.; Katsnelson, M. I.; Geim, A. K. et al. Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane Science 2009, 323, 610-613
18. Ryu, S.; Han, M. Y.; Maultzsch, J.; Heinz, T. F.; Kim, P.; Steigerwald, M. L.; Brus, L. E. Reversible Basal Plane Hydrogenation of Graphene Nano Lett. 2008, 8, 4597-4602
19. Balog, R.; Jørgensen, B.; Nilsson, L.; Andersen, M.; Rienks, E.; Bianchi, M.; Fanetti, M.; Lægsgaard, E.; Baraldi, A.; Lizzit, S. et al. Bandgap Opening in Graphene Induced by Patterned Hydrogen Adsorption Nat. Mater. 2010, 9, 315-319
20. Matis, B. R.; Burgess, J. S.; Bulat, F. A.; Friedman, A. L.; Houston, B. H.; Baldwin, J. W. Surface Doping and Band Gap Tunability in Hydrogenated Graphene ACS Nano 2012, 6, 17-22
21. Sofo, J. O.; Chaudhari, A. S.; Barber, G. D. Graphane: A Two-Dimensional Hydrocarbon Phys. Rev. B 2007, 75, 153401
22. Havu, P.; Ijäs, M.; Harju, A. Hydrogenated Graphene on Silicon Dioxide Surfaces Phys. Rev. B 2011, 84, 205423
23. Chuang, C.; Puddy, R. K.; Lin, H.-D.; Lo, S.-T.; Chen, T.-M.; Smith, C. G.; Liang, C.-T. Experimental Evidence for Efros-Shklovskii Variable Range Hopping in Hydrogenated Graphene Solid State Commun. 2012, 152, 905-908
24. Bang, J.; Chang, K. J. Localization and One-Parameter Scaling in Hydrogenated Graphene Phys. Rev. B 2010, 81, 193412
25. Bostwick, A.; McChesney, J. L.; Emtsev, K. V.; Seyller, T.; Horn, K.; Kevan, S. D.; Rotenberg, E. Quasiparticle Transformation during a Metal-Insulator Transition in Graphene Phys. Rev. Lett. 2009, 103, 056404
26. Ijäs, M.; Havu, P.; Harju, A. Fracturing Graphene by Chlorination: A Theoretical Viewpoint Phys. Rev. B 2012, 85, 035440
27. Li, B.; Zhou, L.; Wu, D.; Peng, H.; Yan, K.; Zhou, Y.; Liu, Z. Photochemical Chlorination of Graphene ACS Nano 2011, 5, 5957-5961
28. Wu, J.; Xie, L.; Li, Y.; Wang, H.; Ouyang, Y.; Guo, J.; Dai, H. Controlled Chlorine Plasma Reaction for Noninvasive Graphene Doping J. Am. Chem. Soc. 2011, 133, 19668-19671
29. Yang, M.; Zhou, L.; Wang, J.; Liu, Z.; Liu, Z. Evolutionary Chlorination of Graphene: From Charge-Transfer Complex to Covalent Bonding and Nonbonding J. Phys. Chem. C 2012, 116, 844-850
30. Nair, R. R.; Ren, W.; Jalil, R.; Riaz, I.; Kravets, V. G.; Britnell, L.; Blake, P.; Schedin, F.; Mayorov, A. S.; Yuan, S. et al. Fluorographene: A Two-Dimensional Counterpart of Teflon Small 2010, 6, 2877-2884
31. Cheng, S.-H.; Zou, K.; Okino, F.; Gutierrez, H. R.; Gupta, A.; Shen, N.; Eklund, P. C.; Sofo, J. O.; Zhu, J. Reversible Fluorination of Graphene: Evidence of a Two-Dimensional Wide Bandgap Semiconductor Phys. Rev. B 2010, 81, 205435
32. Withers, F.; Bointon, T. H.; Dubois, M.; Russo, S.; Craciun, M. F. Nanopatterning of Fluorinated Graphene by Electron Beam Irradiation Nano Lett. 2011, 11, 3912-3916
33. Lee, W. H.; Suk, J. W.; Chou, H.; Lee, J.; Hao, Y.; Wu, Y.; Piner, R.; Akinwande, D.; Kim, K. S.; Ruoff, R. S. Selective-Area Fluorination of Graphene with Fluoropolymer and Laser Irradiation Nano Lett. 2012, 12, 2374-2378
34. Leenaerts, O.; Peelaers, H.; Hernández-Nieves, A. D.; Partoens, B.; Peeters, F. M. First-Principles Investigation of Graphene Fluoride and Graphane Phys. Rev. B 2010, 82, 195436
35. Withers, F.; Dubois, M.; Savchenko, A. K. Electron Properties of Fluorinated Single-Layer Graphene Transistors Phys. Rev. B 2010, 82, 073403
36. Liu, H.; Lee, J. Y. Electric Field Effects on the Adsorption of CO on a Graphene Nanodot and the Healing Mechanism of a Vacancy in a Graphene Nanodot J. Phys. Chem. C 2012, 116, 3034-3038
37. Sun, J. T.; Lu, Y. H.; Chen, W.; Feng, Y. P.; Wee, A. T. S. Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes Phys. Rev. B 2010, 81, 155403
38. Englert, J. M.; Dotzer, C.; Yang, G.; Schmid, M.; Papp, C.; Gottfried, J. M.; Steinrück, H.-P.; Spiecker, E.; Hauke, F.; Hirsch, A. Covalent Bulk Functionalization of Graphene Nat. Chem. 2011, 3, 279-286
39. Niyogi, S.; Bekyarova, E.; Itkis, M. E.; Zhang, H.; Shepperd, K.; Hicks, J.; Sprinkle, M.; Berger, C.; Lau, C. N.; deHeer, W. A. et al. Spectroscopy of Covalently Functionalized Graphene Nano Lett. 2010, 10, 4061-4066
40. Zhang, H.; Bekyarova, E.; Huang, J.-W.; Zhao, Z.; Bao, W.; Wang, F.; Haddon, R. C.; Lau, C. N. Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices Nano Lett. 2011, 11, 4047-4051
41. Joucken, F.; Tison, Y.; Lagoute, J.; Dumont, J.; Cabosart, D.; Zheng, B.; Repain, V.; Chacon, C.; Girard, Y.; Botello-Méndez, A. R. et al. Localized State and Charge Transfer in Nitrogen-Doped Graphene Phys. Rev. B 2012, 85, 161408
42. Banhart, F.; Kotakoski, J.; Krasheninnikov, A. V. Structural Defects in Graphene ACS Nano 2011, 5, 26-41
43. 60 and Some Related Species Chem. Phys. Lett. 1986, 128, 501-503
44. Ugeda, M. M.; Brihuega, I.; Hiebel, F.; Mallet, P.; Veuillen, J.-Y.; Gómez-Rodríguez, J. M.; Ynduráin, F. Electronic and Structural Characterization of Divacancies in Irradiated Graphene Phys. Rev. B 2012, 85, 121402
45. Peng, X.; Ahuja, R. Symmetry Breaking Induced Bandgap in Epitaxial Graphene Layers on SiC Nano Lett. 2008, 8, 4464-4468
46. Aleiner, I. L.; Efetov, K. B. Effect of Disorder on Transport in Graphene Phys. Rev. Lett. 2006, 97, 236801
47. Xing, Y.; Zhang, L.; Wang, J. Topological Anderson Insulator Phenomena Phys. Rev. B 2011, 84, 035110
48. Amini, M.; Jafari, S. A.; Shahbazi, F. Anderson Transition in Disordered Graphene Eur. Phys. Lett. 2009, 87, 37002
49. Ryu, S.; Mudry, C.; Ludwig, A. W. W.; Furusaki, A. Global Phase Diagram of Two-Dimensional Dirac Fermions in Random Potentials Phys. Rev. B 2012, 85, 235115
50. Lherbier, A.; Biel, B.; Niquet, Y.-M.; Roche, S. Transport Length Scales in Disordered Graphene-Based Materials: Strong Localization Regimes and Dimensionality Effects Phys. Rev. Lett. 2008, 100, 036803
51. Lherbier, A.; Dubois, S. M.-M.; Declerck, X.; Niquet, Y.-M.; Roche, S.; Charlier, J.-C. Transport Properties of Graphene Containing Structural Defects Phys. Rev. B 2012, 86, 075402
52. Adam, S.; Cho, S.; Fuhrer, M. S.; Das Sarma, S. Density Inhomogeneity Driven Percolation Metal-Insulator Transition and Dimensional Crossover in Graphene Nanoribbons Phys. Rev. Lett. 2008, 101, 046404
53. Tapasztó, L.; Dobrik, G.; Nemes-Incze, P.; Vertesy, G.; Lambin, Ph.; Biró, L. P. Tuning the Electronic Structure of Graphene by Ion Irradiation Phys. Rev. B 2008, 78, 233407
54. Chen, J.-H.; Cullen, W. G.; Jang, C.; Fuhrer, M. S.; Williams, E. D. Defect Scattering in Graphene Phys. Rev. Lett. 2009, 102, 236805
55. Zhou, Y.-B.; Liao, Z.-M.; Wang, Y.-F.; Duesberg, G. S.; Xu, J.; Fu, Q.; Wu, X.-S.; Yu, D.-P. Ion Irradiation Induced Structural and Electrical Transition in Graphene J. Chem. Phys. 2010, 133, 234703
56. Cançado, L. G.; Jorio, A.; Martins Ferrreira, E. H.; Stavale, F.; Achete, C. A.; Capaz, R. B.; Moutinho, M. V. O.; Lombardo, A.; Kulmala, T. S.; Ferrari, A. C. Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies Nano Lett. 2011, 11, 3190-3196
57. Anwar, A.; Nabet, B.; Culp, J.; Castro, F. Effects of Electron Confinement on Thermionic Emission Current in a Modulation Doped Heterostructure J. Appl. Phys. 1999, 85, 2663-2666
58. Ponomarenko, L. A.; Geim, A. K.; Zhukov, A. A.; Jalil, R.; Morozov, S. V.; Novoselov, K. S.; Grigorieva, I. V.; Hill, E. H.; Cheianov, V. V.; Fal'ko, V. I. et al. Tunable Metal-Insulator Transition in Double-Layer Graphene Heterostructures Nat. Phys. 2011, 7, 958-961
59. Gómez-Navarro, C.; Pablo, P. J.; Gómez-Herrero, J.; Biel, B.; Garcia-Vidal, F. J.; Rubio, A.; Flores, F. Tuning the Conductance of Single-Walled Carbon Nanotubes by Ion Irradiation in the Anderson Localization Regime Nat. Mater. 2005, 4, 534-539
60. Morozov, S. V.; Novoselov, K. S.; Katsnelson, M. I.; Schedin, F.; Elias, D. C.; Jaszczak, J. A.; Geim, A. K. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer Phys. Rev. Lett. 2008, 100, 016602
61. Nakaharai, S.; Iijima, T.; Ogawa, S.; Miyazaki, H.; Li, S.-L.; Tsukagoshi, K.; Sato, S.; Yokoyama, N. Gate-Controlled P-I-N Junction Switching Device with Graphene Nanoribbon Appl. Phys. Exp. 2012, 5, 015101
62. Hiura, H.; Miyazaki, H.; Tsukagoshi, K. Determination of the Number of Graphene Layers: Discrete Distribution of the Secondary Electron Intensity Stemming from Individual Graphene Layers Appl. Phys. Exp. 2010, 3, 095101
63. Lemme, M. C.; Bell, D. C.; Williams, J. R.; Stern, L. A.; Baugher, B. W. H.; Jarillo-Herrero, P.; Marcus, C. M. Etching of Graphene Devices with a Helium Ion Beam ACS Nano 2009, 3, 2674-2676
64. Bell, D. C.; Lemme, M. C.; Stern, L. A.; Williams, J. R.; Marcus, C. M. Precision Cutting and Patterning of Graphene with Helium Ions Nanotechnology 2009, 20, 455301
65. Lehtinen, O.; Kotakoski, J.; Krasheninnikov, A. V.; Tolvanen, A.; Nordlund, K.; Keinonen, J. Effects of Ion Bombardment on a Two-Dimensional Target: Atomistic Simulations of Graphene Irradiation Phys. Rev. B 2010, 81, 153401
66. Åhlgren, E. H.; Kotakoski, J.; Lehtinen, O.; Krasheninnikov, A. V. Ion Irradiation Tolerance of Graphene as Studied by Atomistic Simulations Appl. Phys. Lett. 2012, 100, 233108
67. Hashimoto, A.; Suenaga, K.; Gloter, A.; Urita, K.; Iijima, S. Direct Evidence for Atomic Defects in Graphene Layers Nature 2004, 430, 870-873
68. Meyer, J. C.; Kisielowski, C.; Erni, R.; Rossell, M. D.; Crommie, M. F.; Zettl, A. Direct Imaging of Lattice Atoms and Topological Defects in Graphene Membranes Nano Lett. 2008, 8, 3582-3586