Etching of graphene devices with a helium ion beam

ACS Nano

Volumn 3, Issue 9, 2009, Pages 2674-2676

  Lemme, Max C ^a   Bell, David C ^a,b   Williams, James R ^a   Stern, Lewis A ^c   Baugher, Britton W H ^d   Jarillo Herrero, Pablo ^d   Marcus, Charles M ^a  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

^c Carl Zeiss Vision Inc USA   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Etching; Graphene; Helium ion microscope; Transistor

Indexed keywords

ELECTRICAL MEASUREMENT; ETCHING PROCESS; GRAPHENE; GRAPHENE DEVICES; HELIUM ION BEAMS; HELIUM ION MICROSCOPE; IN-SITU; ION DOSE; RESIDUAL CONDUCTIVITY; SILICON DIOXIDE;

ETCHING; GRAPHITE; HELIUM; HYDROCARBONS; ION BEAMS; ION MICROSCOPES; RADIOACTIVITY; SILICA; SILICON OXIDES;

IONS;

EID: 70349541005     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn900744z     Document Type: Article

References (19)

1. Novoselov, K. S.; Geim, A. K.; Morozov, S. V.; Jiang, D.; Zhang, Y.; Dubonos, S. V.; Grigorieva, I. V.; Firsov, A. A. Electric Field Effect in Atomically Thin Carbon Films. Science 2004, 306, 666-669.
2. Geim, A. K.; Novoselov, K. S. The Rise of Graphene. Nat. Mater. 2007,6,183-191.
3. Lemme, M. C.; Echtermeyer, T. J.; Baus, M.; Kurz, H. A Graphene Field-Effect Device. IEEE Electron Device Lett. 2007, 28, 282-284.
4. Han, M. Y.; Özylimaz, B.; Zhang, Y.; Kim, P. Energy Band-Gap Engineering of Graphene Nanoribbons. Phys. Rev. Lett. 2007, 98, 206805.
5. Chen, Z.; Lin, Y.-M.; Rooks, M. J.; Avouris, P. Graphene Nano-Ribbon Electronics. Physica E 2007,40,228-232.
6. Ponomarenko, L. A.; Schedin, F.; Katsnelson, M. I.; Yang, R.; Hill, E. W.; Novoselov, K. S.; Geim, A. K. Chaotic Dirac Billard in Graphene Quantum Dots. Science 2008,320, 356-358.
7. Stampfer, C.; Güttinger, J.; Molitor, F.; Graf, D.; Ihn, T.; Ensslin, K. Tunable Coulomb Blockade in Nanostructured Graphene. Appl. Phys. Lett. 2008, 92, 012102.
8. Datta, S. S.; Strachan, D. R.; Khamis, S. M.; Johnson, A. T. Crystallographic Etching of Few-Layer Graphene. Nano Lett. 2008, 8, 1912-1915.
9. Li, X.; Wang, X.; Zhang, L.; Lee, S.; Dai, H. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors. Science 2008,379,1229-1232.
10. Kosynkin, D. V.; Higginbotham, A. L.; Sinitskii, A.; Lomeda, J. R.; Dimiev, A.; Price, B. K.; Tour, J. M. Longitudinal Unzipping of Carbon Nanotubes to Form Graphene Nanoribbons. Nature 2009, 458, 872-876.
11. Jiao, L.; Zhang, L.; Wang, X.; Diankov, G.; Dai, H. Narrow Graphene Nanoribbons from Carbon Nanotubes. Nature 2009, 458, 877-880.
12. Fischbein, M. D.; Drndić, M. Electron Beam Nanosculpting of Suspended Graphene Sheets. Appl. Phys. Lett. 2008, 93, 113107.
13. Morgan, J.; Notte, J.; Hill, R.; Ward, B. An Introduction to the Helium Ion Microscope. Microsc. Today 2006, 14, 24-31.
14. Scipioni, L.; Stern, L.; Notte, J. Applications of the Helium Ion Microscope. Microsc. Today 2007, 15, 12-14.
15. Bell, D. C. Contrast Mechanisms and Image Formation in Helium Ion Microscopy. Microsc. Microanal. 2009, 15, 147-153.
16. Bell, D. C.; Lemme, M. C.; Williams, J. R.; Stern, L. A.; Marcus, C. M. Helium Ion Etching of Graphene. Nanotechnology 2009.
17. Williams, J. R.; DiCarlo, L.; Marcus, C. M. Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene. Science 2007, 377, 638-641.
18. Bolotin, K. I.; Sikes, K. J.; Jiang, Z.; Klima, M.; Fudenberg, G.; Hone, J.; Kim, P.; Stormer, H. L. Ultrahigh Electron Mobility in Suspended Graphene. Solid State Commun. 2008, 146, 351-355.
19. Du, X.; Skachko, I.; Barker, A.; Andrei, E. Y. Approaching Ballistic Ttransport in Suspended Graphene. Nat. Nanotechnol. 2008, 3, 491-495.