Surface doping and band gap tunability in hydrogenated graphene

ACS Nano

Volumn 6, Issue 1, 2012, Pages 17-22

  Matis, Bernard R ^a   Burgess, James S ^a   Bulat, Felipe A ^b   Friedman, Adam L ^a   Houston, Brian H ^a   Baldwin, Jeffrey W ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b SOTERA DEFENSE SOLUTIONS   (United States)

Author keywords

band gap; grapheme; hydrogenated grapheme; majority charge carrier; transport

Indexed keywords

CHARGE NEUTRALITY; CHEMICALLY MODIFIED; ELECTRONIC TRANSPORT MEASUREMENTS; GRAPHEME; HYDROGENATED GRAPHEME; MAJORITY CARRIERS; MAXIMUM VALUES; MODERATE TEMPERATURE; P-N JUNCTION; SURFACE DOPING; TEMPERATURE DEPENDENT; TRANSPORT; TUNABILITIES;

CHARGE CARRIERS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELD EFFECTS; ENERGY GAP; HYDROGEN; HYDROGENATION; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS;

GRAPHENE;

GRAPHITE; HYDROGEN; NANOMATERIAL;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; ELECTRON TRANSPORT; MATERIALS TESTING; SEMICONDUCTOR; ULTRASTRUCTURE;

COMPUTER SIMULATION; ELECTRON TRANSPORT; GRAPHITE; HYDROGEN; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; NANOSTRUCTURES; SEMICONDUCTORS;

EID: 84856158132     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn2034555     Document Type: Article

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