High quality Al 2O 3dielectric films deposited by pulsed-DC reactive sputtering technique for high-k applications

Nanoscience and Nanotechnology Letters

Volumn 4, Issue 6, 2012, Pages 645-650

  Bhaisare, Meenakshi ^a   Misra, Abhishek ^a   Waikar, Mayur ^a   Kottantharayil, Anil ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

High k Al 2O 3 dielectric; Inter poly dielectric (IPD); Pulse DC power supply; Reactive sputtering; Surface passivation for silicon solar cell

Indexed keywords

BREAKDOWN FIELD; EQUIVALENT OXIDE THICKNESS; FILM STOICHIOMETRY; FLOATING GATE FLASH MEMORY; GAS-FLOW RATIO; HIGH QUALITY; HIGH-POWER; INTERPOLY DIELECTRICS; P-TYPE SILICON; POWER SUPPLY; PROCESS PARAMETERS; PULSED DC; SOLAR-CELL APPLICATIONS; SPUTTERING TECHNIQUES; SURFACE PASSIVATION;

ATOMIC FORCE MICROSCOPY; DIELECTRIC FILMS; FLASH MEMORY; FLOW OF GASES; PHOTOELECTRONS; REACTIVE SPUTTERING; SILICON SOLAR CELLS; STOICHIOMETRY; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 84864837834     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2012.1362     Document Type: Conference Paper

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