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Volumn 91, Issue 1, 2002, Pages 399-404
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Generalized analysis of quasi-steady-state and transient decay open circuit voltage measurements
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Author keywords
[No Author keywords available]
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Indexed keywords
DEVICE CHARACTERISTICS;
HIGH RESISTIVITY SILICON DEVICES;
MINORITY CARRIER LIFETIMES;
PHOTOCONDUCTANCE;
QUASI-STEADY STATE;
TRANSIENT DECAY;
TRANSIENT TECHNIQUES;
VARYING LIGHTS;
OPEN CIRCUIT VOLTAGE;
SLOW LIGHT;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 0036139271
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1416134 Document Type: Article |
Times cited : (142)
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References (9)
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