Impact of layer thickness on the ferroelectric behaviour of silicon doped hafnium oxide thin films

Thin Solid Films

Volumn 533, Issue , 2013, Pages 88-92

  Yurchuk, Ekaterina ^a   Müller, Johannes ^b   Knebel, Steve ^a   Sundqvist, Jonas ^b   Graham, Andrew P ^a   Melde, Thomas ^a   Schröder, Uwe ^a   Mikolajick, Thomas ^a,c  

^a NAMLAB GGMBH   (Germany)

^b Fraunhofer Center Nanoelectronic Technologies   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Ferroelectric HfO2; Ferroelectric thin films; Si doping; Thickness dependence

Indexed keywords

ANNEALING TEMPERATURES; CRYSTALLIZATION BEHAVIOURS; FERROELECTRIC PROPERTY; HAFNIUM OXIDE THIN FILMS; METAL INSULATOR METAL CAPACITOR (MIM); SI-DOPING; TEMPERATURE DEPENDENCE; THICKNESS DEPENDENCE;

FERROELECTRIC THIN FILMS; FILM THICKNESS; HAFNIUM OXIDES; METAL INSULATOR BOUNDARIES; OXIDES; SEMICONDUCTOR DOPING; SILICON; THICK FILMS; THIN FILMS; X RAY DIFFRACTION;

FERROELECTRICITY;

EID: 84879890335     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.11.125     Document Type: Conference Paper

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