Impact of film properties of atomic layer deposited HfO 2 resulting from annealing with a TiN capping layer

Applied Physics Letters

Volumn 89, Issue 13, 2006, Pages

  Triyoso, D H ^a   Tobin, P J ^a   White Jr , B E ^a   Gregory, R ^a   Wang, X D ^a  

^a FREESCALE SEMICONDUCTOR INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; RAPID THERMAL PROCESS; TETRAGONAL PHASES;

ANNEALING; ATOMIC FORCE MICROSCOPY; HAFNIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MICROSTRUCTURE; TITANIUM NITRIDE;

THIN FILMS;

EID: 33749238159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2357032     Document Type: Article

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