Current status and challenges of ferroelectric memory devices

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 296-304

  Kohlstedt, H ^a   Mustafa, Y ^b   Gerber, A ^a   Petraru, A ^a   Fitsilis, M ^a   Meyer, R ^a   Bottger U ^b   Waser, R ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Conformal coverage; FeRAM; Ferroelectrics; Nonvolatile memories; Scaling

Indexed keywords

CMOS INTEGRATED CIRCUITS; DURABILITY; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; MICROELECTRONICS; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; THIN FILMS;

CONFORMAL COVERAGE; FERAM; NONVOLATILE MEMORIES; SCALING; SPONTANEOUS POLARIZATION;

FERROELECTRIC DEVICES;

EID: 19944420464     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.084     Document Type: Conference Paper

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