Band offsets and dielectric properties of the amorphous Si 3N4/Si(100) interface: A first-principles study

Applied Physics Letters

Volumn 102, Issue 24, 2013, Pages

  Anh Pham, T ^a,b   Li, Tianshu ^c   Nguyen, Huy Viet ^d   Shankar, Sadasivan ^e   Gygi, Francois ^f   Galli, Giulia ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^c The George Washington University   (United States)

^d INSTITUTE OF PHYSICS   (Viet Nam)

^e INTEL CORPORATION   (United States)

^f University of California Davis   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK PROPERTIES; FIRST PRINCIPLES; FIRST-PRINCIPLES STUDY; GW APPROXIMATION; MANY BODY PERTURBATION THEORY; NITRIDE FILMS; STRUCTURAL MODELS; VALENCE BAND OFFSETS;

DIELECTRIC PROPERTIES; SILICON;

AMORPHOUS SILICON;

EID: 84879823485     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811481     Document Type: Article

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