Electronic structures of Β -Si3 N4 (0001) /Si (111) interfaces: Perfect bonding and dangling bond effects

Journal of Applied Physics

Volumn 105, Issue 2, 2009, Pages

  Yang, M ^a   Wu, R Q ^a   Deng, W S ^a   Shen, L ^a   Sha, Z D ^a   Cai, Y Q ^a   Feng, Y P ^a   Wang, S J ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; ATOMS; CHARGE TRANSFER; CRYSTAL ATOMIC STRUCTURE; DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; HYDROGEN; HYDROGEN BONDS; ION EXCHANGE; PROGRAMMING THEORY; SILICON;

BAND OFFSETS; DANGLING BOND EFFECTS; DENSITY-FUNCTIONAL THEORIES; DISSOCIATION ENERGIES; FIRST-PRINCIPLES CALCULATIONS; GAP STATE; GENERALIZED GRADIENT APPROXIMATIONS; INTERFACE PROPERTIES; INTERFACE STRUCTURES; PERFECT BONDINGS; SI (1 1 1); SI ATOMS; SI-H BONDS; SI-N BONDS; THEORETICAL ESTIMATIONS; VALENCE BAND OFFSETS;

DANGLING BONDS;

EID: 59349104188     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3072625     Document Type: Article

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