Generation of highly n-type titanium oxide using plasma fluorine insertion

Nano Letters

Volumn 11, Issue 2, 2011, Pages 751-756

  Seo, Hyungtak ^a,b   Baker, L Robert ^a,b   Hervier, Antoine ^a,b   Kim, Jinwoo ^c   Whitten, J L ^d   Somorjai, Gabor A ^a,b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c North Carolina State University   (United States)

^d NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

fluorine; oxide doping; surface conduction; Titanium oxide; transport

Indexed keywords

AB INITIO CALCULATIONS; DEFECT STATE; METAL OXIDES; N-TYPE DOPING; STRUCTURE MODIFICATION; SURFACE CONDUCTION; TRANSPORT;

ELECTRONIC STRUCTURE; FLUORINE; TITANIUM; TRANSPORT PROPERTIES;

TITANIUM OXIDES;

FLUORINE; NANOMATERIAL; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; GAS; HEAT; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTOR; SURFACE PROPERTY; ULTRASTRUCTURE;

COMPUTER SIMULATION; CRYSTALLIZATION; FLUORINE; GASES; HOT TEMPERATURE; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SEMICONDUCTORS; SURFACE PROPERTIES; TITANIUM;

EID: 79851503110     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl1039378     Document Type: Article

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