Room-temperature TiOx oxide diode for 1D1R resistance-switching memory

2009 International Semiconductor Device Research Symposium, ISDRS '09

Volumn , Issue , 2009, Pages

  Huang, Jiun Jia ^a   Lin, Guan Liang ^a   Kuo, Chih Wei ^a   Chang, Wei Chen ^a   Hou, Tuo Hung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77949350569     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISDRS.2009.5378323     Document Type: Conference Paper

References (5)

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5. J. J. Yang, M. D. Pickett, X. Li, Douglas A. A. Ohlberg, D. R. Stewart and R. S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices," Nature Nanotechnology, vol. 3, pp. 429-433, July, 2008.