Tuning quantum dot luminescence below the bulk band gap using tensile strain

ACS Nano

Volumn 7, Issue 6, 2013, Pages 5017-5023

  Simmonds, Paul J ^a,b   Yerino, Christopher D ^a   Sun, Meng ^b   Liang, Baolai ^b   Huffaker, Diana L ^b   Dorogan, Vitaliy G ^c   Mazur, Yuriy ^c   Salamo, Gregory ^c   Lee, Minjoo Larry ^a  

^a Yale University   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c UNIVERSITY OF ARKANSAS   (United States)

Author keywords

band gap engineering; InP(110); molecular beam epitaxy; quantum dots; self assembled growth; strain engineering; tensile strain

Indexed keywords

BAND GAP ENGINEERING; INP; OPTICAL TRANSITION ENERGIES; QUANTUM CONFINEMENT AND PHOTOLUMINESCENCES; QUANTUM DOT LUMINESCENCE; SELF ASSEMBLED QUANTUM DOTS; SELF-ASSEMBLED GROWTH; STRAIN ENGINEERING;

ENERGY GAP; GALLIUM ARSENIDE; GERMANIUM; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS;

TENSILE STRAIN;

EID: 84879680392     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn400395y     Document Type: Article

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