Highly tensile-strained, type-II, Ga1-x Inx As/GaSb quantum wells

Applied Physics Letters

Volumn 96, Issue 6, 2010, Pages

  Taliercio, T ^a   Gassenq, A ^a   Luna, E ^b   Trampert, A ^b   Tourni E ^a  

^a UNIV MONTPELLIER   (France)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND ALIGNMENTS; EX SITU; GROWTH MODES; IN-SITU OBSERVATIONS; INTERFACIAL LAYER; MATRIX; QUANTUM DOT; QUANTUM WELL; ROOM TEMPERATURE;

SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ACTIVE AGENTS; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM;

EID: 76749148732     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3303821     Document Type: Article

References (8)

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