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Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

Photoluminescence investigation of high quality GaAs1-x Bi x on GaAs

(5) Mohmad, A R a,b Bastiman, F a Ng, J S d Sweeney, S J c David, J P R a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

b INSTITUTE OF MICROENGINEERING AND NANOELECTRONICS IMEN (Malaysia)

c UNIVERSITY OF SURREY (United Kingdom)

d NONE

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FLUCTUATION; BAND GAPS; CARRIER RECOMBINATION; EXCITATION POWER; EXCITON LOCALIZATION; FULL WIDTH HALF MAXIMUM; GAAS; HIGH QUALITY; HIGH TEMPERATURE; LOW TEMPERATURES; PEAK ENERGY; PEAK WAVELENGTH; PHOTOLUMINESCENCE INVESTIGATION; RADIATIVE RECOMBINATION; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE;

GALLIUM ALLOYS; GALLIUM ARSENIDE; PHOTOLUMINESCENCE; TEMPERATURE DISTRIBUTION;

SEMICONDUCTING GALLIUM;

EID: 79953885742 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3565244 Document Type: Article

Times cited : (39)

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